New PDF release: Advances in Electronics and Electron Physics, Vol. 86

By Peter W. Hawkes (ed.)

ISBN-10: 0120147289

ISBN-13: 9780120147281

This sequence covers a variety of subject matters, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person elements of those tools to theoretical and useful features of recent electroinics. one other wide intterest is electronic photo processing and trend reputation, together with the units hired and the tools constructed. Electron physics is interpreted very liberally and articles are frequently integrated on fabrics of present curiosity in addition to at the units that hire them. the article of the sequence is to supply articles which may assessment a brand new or speedily constructing box, or may well hide decades of study, therefore delivering a small monograph on a particular topic. "Advances in Electronics and Electron Physics" quantity 86 gains articles at the following subject matters: GaAs semiconductor stories; photograph processing; N-beam calculators; and electron optics.

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Extra resources for Advances in Electronics and Electron Physics, Vol. 86

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55 eV at x = 1. Perhaps an advantage can be gained by storing holes in a twodimensional gas at the GaAs/AlAs interface! Figure 40 shows a heterostructure storage capacitor formed by undoped AlAs and n-type GaAs. This capacitor was also studied by the method of C-t transients (Qian, Melloch, and Cooper, 1986, 1989), and the results for a gate voltage of - 3 V are shown in Fig. 41. Here we see that storage times of tens of seconds are obtained at 100 K, and measurable charge storage persists to almost 200 K.

In all, 40 JFETs and 8 storage capacitors are involved. Figure 34 shows operating waveforms of the 2 x 2 DCAM array. During the first six cycles a distinctive binary pattern (all 0s) is loaded into the 42 JAMES A. COOPER, JR. Word Line I - . Bit Bit Line Line Match Line 5 0, L m B L Storage Node Contact Storage Capicitor (Gate Metal) v) >m ‘DRAM Access JFET FIGURE33. Schematic of one cell of the JFET DCAM cell (top) and layout of the cell (bottom). Each cell consists of two one-transistor DRAM cells and four n-channel JFET XNOR transistors.

Drain current vs. gate voltage for a 5 x 350pm ring-gate JFET. , 1990; Neudeck, 1991). Figure 29 shows drain current versus gate voltage for a 5 x 350pm ring-gate JFET, while Fig. 30 shows drain current in a 10 x 350pm ring-gate MESFET. At room temperature, the gate-to-drain leakage in the JFET is more than two orders of magnitude smaller than in the MESFET. Thus, one expects superior storage time performance from a JFET-based memory. , 1991a). (It is important in this procedure that the metal not be deposited in an electron-beam evaporator).

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Advances in Electronics and Electron Physics, Vol. 86 by Peter W. Hawkes (ed.)


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